| Themes: |
Introduction, efficiency limits & fitting data |
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Junction models & planar optics |
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Advanced light-trapping structures |
| 1.00 - 1.30 |
Introduction to computer modelling & Solcore |
1.00 - 1.30 |
Introduction to different junction models |
1.00 - 1.20 |
Introduction to RayFlare & different optical methods |
| 1.30 - 2.15 |
Limiting current & voltage models |
1.30 - 2.00 |
Planar Si cell using depletion approximation junction |
1.20 - 2.00 |
Effect of diffraction grating (RCWA) and ray-tracing (RT) on a silicon wafer |
| 2.15 - 2.45 |
Break |
2.00 - 2.30 |
Introduction to the transfer-matrix method: interference |
2.00 - 2.30 |
GaInP/GaAs/Si triple-junction cell with rear diffraction grating |
| 2.45 - 3.30 |
Shockley-Queisser efficiency limit |
2.30 - 3.00 |
Break |
2.30 - 3.00 |
Break |
| 3.30 - 4.00 |
Two-diode model fits to experimental data |
3.00 - 3.20 |
Optimizing anti-reflection coatings |
3.00 - 3.45 |
Epoxy-bonded GaInP/GaAs//Si triple-junction cell with pyramidally textured silicon |
| 4.00 - 4.15 |
Break |
3.20 - 4.00 |
Planar Si cell using drift-diffusion junction |
3.45 - 4.30 |
Perovskite on silicon tandem cell with pyramidal texturing |
| 4.15 - 5.00 |
Changing irradiance spectra |
4.00 - 4.15 |
Break |
4.30 - 5.00 |
Using the Katana HPC |
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4.15 - 5.00 |
Optical model of a planar III-V on Si tandem cell |
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